MAGNETIC RESPONSE OF Pr1-xLaCexCuO4 IN COMPARISON WITH HOLE-DOPED CUPRATES
نویسندگان
چکیده
منابع مشابه
Bandstructures of hole - doped cuprates ; correlation with T c
Abstract.We have developed a down-folding proceedure based on the density-functional formalism and the muffin-tin-orbital method for deriving low-energy, single-particle orbitals. By application to many families of cuprate high-temperature superconductors, we have derived a simple, generic conduction-band Hamiltonian for these systems. The essential materialsdependence turns out to be contained...
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The introduction of holes in a parent compound consisting of copper oxide layers results in high-temperature superconductivity. It is also possible to dope the cuprate parent compound with electrons1–3. The physical properties of these electrondoped materials bear some similarities to but also significant differences from those of their hole-doped counterparts. Here, we use a recently developed...
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From analysis of the in-plane resistivity ρ(ab)(T) of La(2-x)Sr(x)CuO(4), we show that normal state transport in overdoped cuprates can be delineated into two regimes in which the electrical resistivity varies approximately linearly with temperature. In the low-temperature limit, the T-linear resistivity extends over a very wide doping range, in marked contrast to expectations from conventional...
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We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of states at zero temperature. The energy scale for the pseudogap is set by the nearest-neighbor singlet-triplet splitting. As this energy scale vanishes if transit...
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ژورنال
عنوان ژورنال: SPIN
سال: 2014
ISSN: 2010-3247,2010-3255
DOI: 10.1142/s2010324714400062